DMS2220LFDB document number: ds31546 rev. 7 - 2 1 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. p-channel enhancemen t mode mosfet with integrated sbr ? super barrier rectifier features ? low on-resistance ? 95m @v gs = -4.5v ? 120m @v gs = -2.5v ? 86m (typ) @v gs = -1.8v ? low gate threshold voltage, -1.3v max ? fast switching speed ? low input/output leakage ? incorporates low v f super barrier rectifier (sbr ? ) ? low profile, 0.5mm max height ? lead free/rohs compliant (note 2) ? "green" device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn2020b-6 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: see diagram ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 6 ? ordering information: see page 6 ? weight: 0.0065 grams (approximate) maximum ratings ? total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 1) p d 1.4 w thermal resistance, junction to ambient r ja 89 c/w operating and storage temperature range t j , t stg -55 to +150 c maximum ratings ? p-chann el mosfet ? q1 @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 12 v drain current (note 1) i d -3.5 a pulsed drain current (note 4) i dm -12 a maximum ratings ? sbr ? ? d1 @t a = 25c unless otherwise specified characteristic symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 35 v rms reverse voltage v r ( rms ) 25 v average rectified output current i o 1 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load i fsm 3 a notes: 1. device mounted on fr-4 pcb, on minimum recommended, 2oz copper pad layout. 2. no purposefully added lead. 3. diodes inc.?s ?green? policy can be found on ou r website at http://www.diodes .com/products/lead_free/index.php. 4. repetitive rating, pulse widt h limited by junction temperature. dfn2020b-6 bottom view internal schematic top view 123 456 a nc d s g k q1 d1 bottom view pin configuration a nc d s gk kd
DMS2220LFDB document number: ds31546 rev. 7 - 2 2 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. electrical characteristics ? p-channel mosfet ? q1 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? ? ? 100 800 na v gs = 8v, v ds = 0v v gs = 12v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) -0.45 ? -1.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? ? 60 74 86 95 120 ? m v gs = -4.5v, i d = -2.8a v gs = -2.5v, i d = -2.0a v gs = -1.8v, i d = -1.0a forward transfer admittance |y fs | ? 8 ? s v ds = -5v, i d = -2.8a diode forward voltage (note 5) v sd ? 0.7 -1.2 v v gs = 0v, i s = -1.6a dynamic characteristics input capacitance c iss ? 632 ? pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss ? 65 ? pf reverse transfer capacitance c rss ? 54 ? pf electrical charact eristics ? sbr ? ? d1 @ t a = 25oc unless otherwise specified characteristic symbol min typ max unit test condition reverse breakdown voltage (note 5) v ( br ) r 35 40 ? v i r = 1ma forward voltage v f ? ? 354 415 0.42 0.49 v i f = 0.5a i f = 1.0a reverse current (note 5) i r ? ? 100 a v r = 20v notes: 5. short duration pulse test used to minimize self-heating effect. q1, p-channel mosfet 01 2 3 45 fig. 1 typical output characteristics -v , drain-source voltage (v) ds 0 2 4 6 8 10 -i , d r ai n c u r r e n t (a) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs v = -1.0v gs v = -1.2v gs 0.5 1 1.5 2 0 2 4 6 8 10 -i , d r ain c u r r en t (a) d fig. 2 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a
DMS2220LFDB document number: ds31546 rev. 7 - 2 3 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. q1, p-channel mosfet - continued 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 012345678 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain current (a) d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 012 34 56 78 -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0.03 0.05 0.07 0.09 0.11 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-source on-resistance ( ) ds(on) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 10 100 1,000 10,000 c , c a p a c i t an c e (p f ) 048121620 fig. 7 typical capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c oss c rss fig. 8 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) i = -250a d i = -1ma d
DMS2220LFDB document number: ds31546 rev. 7 - 2 4 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. q1, p-channel mosfet - continued 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current 0 2 4 6 8 10 -i , s o u r c e c u r r e n t (a) s t = 25c a 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 146c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0.9 fig. 10 transient thermal response t , pulse duration time (s) 1
DMS2220LFDB document number: ds31546 rev. 7 - 2 5 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. d1, sbr ? fig. 11 forward power dissipation 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.5 1 1.5 i , average forward current (a) f(av) p , p o we r dissi p a t i o n (w) d fig. 12 typical forward characteristics 0.0001 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0.8 v , instantaneous forward voltage (v) f i , instantaneous forward current (a) f fig. 13 typical reverse characteristics 0.01 0.1 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v , instantaneous reverse voltage (v) r i , instantaneous reverse current(ua) r t = 25c a t = 85c a t = 150c a t = 125c a fig. 14 total capacitance vs. reverse voltage v , dc reverse voltage (v) r 1 10 100 1,000 10,000 0.1 1 10 100 c , c a p a c i t an c e (p f ) f = 1mhz fig. 15 forward current derating curve 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 175 t , ambient temperature (c) a i , average forward current (a) f(av) note 2 fig. 16 operating temperature derating 0 25 50 75 100 125 150 010203040 v , dc reverse voltage (v) r t , derated ambient temperature (c) a
DMS2220LFDB document number: ds31546 rev. 7 - 2 6 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. ordering information (note 6) part number case packaging DMS2220LFDB-7 dfn2020b-6 3000/tape & reel notes: 6. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout dfn2020b-6 dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? 0.45 d2 0.50 0.70 0.60 e ? ? 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? 0.15 l 0.25 0.35 0.30 z ? ? 0.225 all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 me = marking code ym = date code marking y = year (ex: v = 2008) m = month (ex: 9 = september) dot denotes pin 1 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1 me ym
DMS2220LFDB document number: ds31546 rev. 7 - 2 7 of 7 www.diodes.com july 2009 ? diodes incorporated DMS2220LFDB sbr is a registered trademark of diodes incorporated. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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